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2SC5646A 40N10 CKDIAAAA RQK0605 A1206 CPD98V EN7190B PF100
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 Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3710
DESCRIPTION With TO-220Fa package Complement to type 2SA1452 Low collector saturation voltage High speed switching time APPLICATIONS High current switching applications
PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter DESCRIPTION
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg

PARAMETER
CHA IN
Collector current Base current Collector dissipation
Collector-base voltage
Collector-emitter voltage
E SEM NG
Open base
Open emitter
OND IC
CONDITIONS
TOR UC
VALUE 80 80 6 12 2
UNIT V V V A A W ae ae
Emitter-base voltage
Open collector
TC=25ae
30 150 -55~150
Junction temperature Storage temperature
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Output capacitance Transition frequency CONDITIONS IC=50mA ;IB=0 IC=6A;IB=0.3A IC=6A;IB=0.3A VCB=80V; IE=0 VEB=6V; IC=0 IC=1A ; VCE=1V IC=6A ; VCE=1V IE=0 ; VCB=10V, f=1MHz IC=1A ; VCE=5V 70 40 MIN 80 0.2 0.9
2SC3710
SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 COB fT
TYP.
MAX
UNIT V
0.4 1.2 10 10 240 |I |I
V V A A
Switching times ton ts tf
Fall time

CHA IN
Turn-on time Storage time
E SEM NG
OND IC
TOR UC
80 0.2 1.0 0.2
220
pF MHz
|I |I |I
s s s
IB1=-IB2=0.3A VCCO 30V ,RL=5|
hFE-1 Classifications O 70-140 Y 120-240
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SC3710

CHA IN
E SEM NG
OND IC
TOR UC
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3710

CHA IN
E SEM NG
OND IC
TOR UC
4


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